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| to-92 plastic-encapsulate transistors 2SD1991A transistor (npn) features z high foward current transfer ratio h fe z low collector to emitter saturation voltage v ce(sat) . z allowing supply with the radial taping. maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 7 v i c collector current -continuous 100 ma p c collector power dissipation 400 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 uless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector-base breakdown voltage v (br)cbo i c =10 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =2ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =10 a,i c =0 7 v collector cut-off current i cbo v cb =20v,i e =0 1 a emitter cut-off current i ebo v eb =7v,i c =0 1 a h fe(1) v ce =10v,i c =2ma 160 460 dc current gain h fe(2) v ce =2v,i c =100ma 90 collector-emitter saturation voltage v ce(sat) i c =100ma,i b =10ma 0.3 v transition frequency f t v ce =10v,i c =2ma,f=200mhz 150 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 3.5 pf classification of h fe(1) rank q r s range 160-260 210-340 290-460 to-92 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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